PowerSO-10RF (straight lead)

PowerSO-10RF (straight lead)

STMicroelectronicsSwitzerland

PD55003S-E

ActiveTransistors - FETs, MOSFETs - RFPowerSO-10RF

FET RF 40V 500MHZ PWRSO10

PD55003S-E is an N-channel enhancement-mode LDMOS RF power transistor in PowerSO-10RF straight lead package, with 40V max drain-source voltage and 165°C junction temperature, designed for high-gain broadband applications up to 1 GHz.Checked against the datasheet

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Technical parameters

Datasheet-verified parameters

12 items
ParameterValue and test conditionsSource
PackagePowerSO-10RF (straight lead)
Operating temperatureMax. operating junction temperature: 165 °C
Storage temperature-65 to +150 °C
Drain-source voltage40 V (T_CASE = 25°C)
Gate-source voltage±20 V (T_CASE = 25°C)
Drain current2.5 A (T_CASE = 25°C)
Power dissipation31.7 W (@ T_C = 70°C)
Output power3 W with 17dB gain @ 500 MHz / 12.5 V
Operating frequencyup to 1 GHz
Operating voltage12 V
Moisture sensitivity levelMSL 3 (J-STD-020B)
PackingTube
All parameters (16)ExpandCollapse
Power
Current Rating (Amps)2.5A
Current - Test50 mA
Power - Output3W
Voltage - Rated40 V
Voltage - Test12.5 V
AC and DC characteristics
Frequency500MHz
Gain17dB
Noise Figure-
Environment and package
PackageTube
Package / CasePowerSO-10 Exposed Bottom Pad
Supplier Device PackagePowerSO-10RF (Straight Lead)
Other
Base Product NumberPD55003
MfrSTMicroelectronics
Product StatusActive
Series-
Transistor TypeLDMOS

Pinout and package

Figure 1. Pin connection
Figure 1. Pin connection
Package: PowerSO-10RF (straight lead)
PinNameFunctionSource
1Source
2Gate
3Drain

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DatasheetDatasheet · 469.3 KB · 2026-11-03
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