PDW(芯格诺科技)China
900V N沟道MOSFET，采用无铅封装，具备低栅极电荷和快速恢复体二极管
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage900 V
Continuous drain current4 A
On-resistance3.6 ΩMax · 10V
| Power | |
|---|---|
| 漏源电压(Vdss) | 900V |
| 连续漏极电流(Id) | 4A |
| Other | |
| 导通电阻(RDS(on)) | 3.6Ω@10V |
| 数量 | 1个N沟道 |
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