VBsemi(微碧半导体)China
P9006EVG-VB
Transistors - FETs, MOSFETs - Single台积电流片，长电科技封装；是一款单P型MOSFET器件，采用Trench工艺制造，适用于各种电子设备和系统中。SOP8；P—Channel沟道,-60V；-8A；RDS(ON)=60mΩ@VGS=10V,VGS=20V；Vth=-1~-2.5V；
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View full reportTechnical parameters
Key specs
ChannelP-channel
Drain-source voltage60 V
Continuous drain current4.75 A
On-resistance60 mΩMax · 10V
| Power | |
|---|---|
| 漏源电压(Vdss) | 60V |
| 连续漏极电流(Id) | 4.75A |
| Other | |
| 导通电阻(RDS(on)) | 60mΩ@10V,4.3A |
| 数量 | 1个P沟道 |