Vishay General Semiconductor - Diodes DivisionUnited States
DIODE GEN PURP 200V 6A P600
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View full reportTechnical parameters
Key specs
Reverse voltage200 V
Average rectified current6 A
Forward voltage900 mVMax · 6 A
TypeStandardStandard Recovery >500ns，> 200mA (Io)
| Power | |
|---|---|
| Current - Average Rectified (Io) | 6A |
| Current - Reverse Leakage @ Vr | 5 µA @ 200 V |
| Voltage - DC Reverse (Vr) (Max) | 200 V |
| Voltage - Forward (Vf) (Max) @ If | 900 mV @ 6 A |
| Environment and package | |
| Mounting Type | Through Hole |
| Operating Temperature - Junction | -50°C~150°C |
| Package | Tape & Reel (TR) |
| Package / Case | P600, Axial |
| Supplier Device Package | P600 |
| Other | |
| Base Product Number | P600 |
| Capacitance @ Vr, F | 150pF @ 4V, 1MHz |
| Diode Type | Standard |
| Mfr | Vishay General Semiconductor - Diodes Division |
| Product Status | Obsolete |
| Reverse Recovery Time (trr) | 2.5 µs |
| Series | - |
| Speed | Standard Recovery >500ns, > 200mA (Io) |