VBsemi(微碧半导体)China
P5NA50-VB
Transistors - FETs, MOSFETs - SingleTO220；N—Channel沟道,600V；8A；RDS(ON)=780mΩ@VGS=10V,VGS=30V；Vth=2~4V；
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View full reportTechnical parameters
Key specs
Drain-source voltage600 V
Continuous drain current8 A
On-resistance780 mΩMax · 10V
| Power | |
|---|---|
| 漏源电压(Vdss) | 600V |
| 连续漏极电流(Id) | 8A |
| Other | |
| 导通电阻(RDS(on)) | 780mΩ@10V |
| 耗散功率(Pd) | 170W |