SHINDENGEN(新电元)Japan
Our MOSFET has a wide lineup ranging from low withstand voltage to high withstand voltage. ■EETMOS Series ( Nch Single / V DSS 40 to 150V ) EETMOS series reduces Qg by optimizing the trench gate structure and layout, and has the industry's top level performance. EETMOS 2：Balanced Ron and Qg EETMOS 3：Low Ron、Low Qg EETMOS 4：Ultra Low Ron、Low Qg ■Hi-PotMOS Series（Nch Single / V DSS 250 to 600V ） Hi‐PotMOS series has the industry's top level of high destruction tolerance, and 100% screening inspection of di/dt and avalanche is carried out. Hi-PotMOS：High breakdown resistance, Avalanche rate, di/dt inspection (all parts) VX3：Automotive qualified, Avalanche rate, di/dt inspection (all parts), High breakdown resistance, High ESD Capability
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View full reportTechnical parameters
Key specs
Continuous drain current105 A
| Power | |
|---|---|
| Continuous drain current(DC) | 105 |
| Continuous drain current(Peak) | 315 |
| Drain-Source breakdown voltage | 40 |
| Drain-source voltage | 40 |
| Gate-source leakage current | ±0.1 |
| Gate-source voltage | ±20 |
| Gate threshold voltage | 4 |
| Single avalanche current | 41 |
| Source-drain diode forward voltage | 1.5 |
| Total power dissipation | 168 |
| Zero gate voltage drain current | 1 |
| AC and DC characteristics | |
| Fall time | 27 |
| Rise time | 20 |
| Turn-off delay time | 49 |
| Turn-on delay time | 7 |
| Environment and package | |
| Channel tempertature | -55 to 175 |
| Package (House Name) | LF |
| Package (JEDEC Code) | MO-235B similar |
| Storage temperature | -55 to 175 |
| Temperature1 | Tc |
| Temperrature2 | Tc |
| Thermal resistance | 0.89 |
| Other | |
| As | Non-USE |
| Automotive | YES |
| Based on AEC-Q101 | YES |
| Br | Non-USE |
| Conditions | VDD=32V, VGS=10V, ID=105A |
| conditions | IF=105A, VGS=0V, di/dt=100A/μs |
| Ctrl Number | P105LF4QNK_Rev.03(2021.10) |
| Diag01 | P105LF4QNK_01_VDS.jpg |
| Diag02 | P105LF4QNK_02_VGS.jpg |
| Diag03 | P105LF4QNK_03_Ron-ID.jpg |
| Diag04 | P105LF4QNK_04_Ron-Tc.jpg |
| Diag05 | P105LF4QNK_05_Vth.jpg |
| Diag06 | P105LF4QNK_06_SOA.jpg |
| Diag07 | P105LF4QNK_07_TTI.jpg |
| Diag08 | P105LF4QNK_08_C.jpg |
| Diag09 | P105LF4QNK_09_PD.jpg |
| Diag10 | P105LF4QNK_10_Qg.jpg |
| Diag11 | P105LF4QNK_11_DC.jpg |
| Diode reverse recovery charge | 43 |
| Diode reverse recovery time | 40 |
| Evidence | 5QE-188241-1.pdf |
| Forward transconductance | 10 |
| Gate to drain charge | 24 |
| Gate to source charge | 18 |
| I D | 105A |
| Input capacitance | 3400 |
| Ni | USE |
| Order Quantity | FAQをご確認ください。 |
| Output capacitance | 525 |
| Pb | USE |
| Polarity | N-channel |
| R DS(ON) (typ.) | 2.2mΩ |
| Reverce transfer capacitnce | 252 |
| Rp | Non-USE |
| Sb | Non-USE |
| Series | EETMOS4 |
| Single avalanche energy | 183 |
| Spec Code | 5071 |
| Static drain-source on-state resistance | 0.0028 |
| Total gate charge | 62 |
| V DSS | 40V |
| Vth(typ.) | 3.0V |