Diotec SemiconductorGermany
DIODE GEN PURP 800V 10A P600
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View full reportTechnical parameters
Key specs
Reverse voltage800 V
Average rectified current10 A
Forward voltage1.05 VMax · 10 A
TypeStandardStandard Recovery >500ns，> 200mA (Io)
| Power | |
|---|---|
| Current - Average Rectified (Io) | 10A |
| Current - Reverse Leakage @ Vr | 10 µA @ 800 V |
| Voltage - DC Reverse (Vr) (Max) | 800 V |
| Voltage - Forward (Vf) (Max) @ If | 1.05 V @ 10 A |
| Environment and package | |
| Mounting Type | Through Hole |
| Operating Temperature - Junction | -50°C~175°C |
| Package | Strip |
| Package / Case | P600, Axial |
| Supplier Device Package | P600 |
| Other | |
| Base Product Number | P1000K |
| Capacitance @ Vr, F | - |
| Diode Type | Standard |
| Mfr | Diotec Semiconductor |
| Product Status | Active |
| Reverse Recovery Time (trr) | 1.5 µs |
| Series | - |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
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