VBsemi(微碧半导体)China
P0803BDG-VB
Transistors - FETs, MOSFETs - SingleTO252；N—Channel沟道,30V；80A；RDS(ON)=5mΩ@VGS=10V,VGS=±20V；Vth=1~2.5V；
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No technical parameters are available for this part.
TO252；N—Channel沟道,30V；80A；RDS(ON)=5mΩ@VGS=10V,VGS=±20V；Vth=1~2.5V；
No technical parameters are available for this part.