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Technical parameters

Power
ID-最大漏极电流8A
Id-额定电流8A
VDSS-最大漏源电压650V
Vgs(th)-门槛电压3.8V
AC and DC characteristics
RDS(on)-漏源导通阻抗650mΩ
Ron-最大导通阻抗650mΩ
Environment and package
封装类型1TO220
Other
Qg-栅极电荷NnC
Vdss-漏源耐压650V
Vgs-栅源耐压30V
内置ESD保护二极管0
内置整流二极管0
引脚数量13
集成ESD保护二极管0
集成整流二极管0

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