MOSFET N-CH 40V 110A TO263-3
All alternatives
View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage40 V
Continuous drain current110 A
On-resistance1.4 mΩMax · 55A
Gate threshold voltage4 VMax · 250μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 110A (Tc) |
| Drain to Source Voltage (Vdss) | 40 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Power Dissipation (Max) | 1.8W (Ta), 348W (Tc) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | 175°C(TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT); Digi-Reel® |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package | TO-263-3 |
| Other | |
| Base Product Number | NP110N04 |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 297 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 15750 pF @ 25 V |
| Mfr | Renesas Electronics America Inc |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 1.4mOhm @ 55A, 10V |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |