onsemiUnited States
DIODE GEN PURP 1KV 2A AXIAL
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Technical parameters
Key specs
Reverse voltage1 kV
Average rectified current2 A
Forward voltage2.2 VMax · 2 A
TypeStandardFast Recovery =< 500ns，> 200mA (Io)
| Power | |
|---|---|
| Current - Average Rectified (Io) | 2A |
| Current - Reverse Leakage @ Vr | 10 µA @ 1000 V |
| Voltage - DC Reverse (Vr) (Max) | 1000 V |
| Voltage - Forward (Vf) (Max) @ If | 2.2 V @ 2 A |
| Environment and package | |
| Mounting Type | Through Hole |
| Operating Temperature - Junction | -65°C~175°C |
| Package | Bulk |
| Package / Case | DO-204AL, DO-41, Axial |
| Supplier Device Package | Axial |
| Other | |
| Base Product Number | MUR2100 |
| Capacitance @ Vr, F | - |
| Diode Type | Standard |
| Mfr | onsemi |
| Product Status | Active |
| Reverse Recovery Time (trr) | 100 ns |
| Series | SWITCHMODE™ |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |