Microchip TechnologyUnited States
PM-DIODE-SIC-SBD-D1P
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Technical parameters
| Power | |
|---|---|
| Current - Average Rectified (Io) (per Diode) | 100A |
| Current - Reverse Leakage @ Vr | 400 µA @ 1200 V |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 100 A |
| Environment and package | |
| Mounting Type | Chassis Mount |
| Operating Temperature - Junction | -40°C~175°C |
| Package | Box |
| Package / Case | Module |
| Supplier Device Package | D1P |
| Other | |
| Base Product Number | MSCDC100 |
| Diode Configuration | 1 Pair Series Connection |
| Diode Type | Silicon Carbide Schottky |
| Mfr | Microchip Technology |
| Product Status | Active |
| Reverse Recovery Time (trr) | 0 ns |
| Series | - |
| Speed | No Recovery Time > 500mA (Io) |
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