Microchip TechnologyUnited States
<ul><li>SiC Schottky Diode</li><li>Zero reverse recovery</li><li>Zero forward recovery</li><li>Temperature Independent switching behavior</li><li>Positive temperature coefficient on VF</li><li>Low stray inductance</li><li>High efficiency converter</li><li>Outstanding performance at high frequency operation</li><li>Stable temperature behavior</li><li>Direct mounting to heatsink (isolated package)</li><li>Low junction to case thermal resistance</li><li>RoHS Compliant</li></ul>
All alternatives
View full reportTechnical parameters
| Power | |
|---|---|
| Current A (ampere) | 100 |
| Reverse Leakage Current | 30 |
| Environment and package | |
| MaxOperatingJunctionTemp | 175 |
| Other | |
| Configuration | Phase Leg |
| PKG | D1P |
| Silicon Type | SiC Diode |
| Total Capacitive Charge | 448 |
| VF (V) | 1.5 |
| VRRM (V) | 1200 |
Documents
DatasheetDatasheet · 664.4 KB · 2026-09-23MarketingMarketing · 22.4 MB · 2026-09-23Application NoteApplication Note · 4.0 MB · 2026-09-23Application NoteApplication Note · 725.6 KB · 2026-09-23Application NoteApplication Note · 529.6 KB · 2026-09-23Application NoteApplication Note · 374.0 KB · 2026-09-23Application NoteApplication Note · 347.3 KB · 2026-09-23Application NoteApplication Note · 333.8 KB · 2026-09-23Application NoteApplication Note · 241.7 KB · 2026-09-23Application NoteApplication Note · 238.0 KB · 2026-09-23Application NoteApplication Note · 227.5 KB · 2026-09-23Application NoteApplication Note · 221.1 KB · 2026-09-23Application NoteApplication Note · 144.0 KB · 2026-09-23
Open document center