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MSCDC100A120D1PAG-MODULE

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<ul><li>SiC Schottky Diode</li><li>Zero reverse recovery</li><li>Zero forward recovery</li><li>Temperature Independent switching behavior</li><li>Positive temperature coefficient on VF</li><li>Low stray inductance</li><li>High efficiency converter</li><li>Outstanding performance at high frequency operation</li><li>Stable temperature behavior</li><li>Direct mounting to heatsink (isolated package)</li><li>Low junction to case thermal resistance</li><li>RoHS Compliant</li></ul>

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Technical parameters

Power
Current A (ampere)100
Reverse Leakage Current30
Environment and package
MaxOperatingJunctionTemp175
Other
ConfigurationPhase Leg
PKGD1P
Silicon TypeSiC Diode
Total Capacitive Charge448
VF (V)1.5
VRRM (V)1200

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DatasheetDatasheet · 664.4 KB · 2026-09-23MarketingMarketing · 22.4 MB · 2026-09-23Application NoteApplication Note · 4.0 MB · 2026-09-23Application NoteApplication Note · 725.6 KB · 2026-09-23Application NoteApplication Note · 529.6 KB · 2026-09-23Application NoteApplication Note · 374.0 KB · 2026-09-23Application NoteApplication Note · 347.3 KB · 2026-09-23Application NoteApplication Note · 333.8 KB · 2026-09-23Application NoteApplication Note · 241.7 KB · 2026-09-23Application NoteApplication Note · 238.0 KB · 2026-09-23Application NoteApplication Note · 227.5 KB · 2026-09-23Application NoteApplication Note · 221.1 KB · 2026-09-23Application NoteApplication Note · 144.0 KB · 2026-09-23
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