Microchip TechnologyUnited States
PM-DIODE-SIC-SBD-SOT227
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Technical parameters
Key specs
Reverse voltage700 V
Average rectified current50 A
Forward voltage1.8 VMax · 50 A
TypeSchottky
| Power | |
|---|---|
| Current - Average Rectified (Io) | 50 A |
| Current - Reverse Leakage @ Vr | 200 µA @ 700 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 50 A |
| Voltage - Peak Reverse (Max) | 700 V |
| Environment and package | |
| Mounting Type | Chassis Mount |
| Operating Temperature | -55°C~175°C(TJ) |
| Package | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Supplier Device Package | SOT-227 (ISOTOP®) |
| Other | |
| Base Product Number | MSC50DC70 |
| Diode Type | Single Phase |
| Mfr | Microchip Technology |
| Product Status | Active |
| Series | - |
| Technology | Silicon Carbide Schottky |
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