Microchip TechnologyUnited States
<ul><li>SiC Schottky Diode</li><li>Zero reverse recovery</li><li>Zero forward recovery</li><li>Temperature Independent switching behavior</li><li>Positive temperature coefficient on VF</li><li>Low stray inductance</li><li>High efficiency converter</li><li>Outstanding performance at high frequency operation</li><li>Stable temperature behavior</li><li>Direct mounting to heatsink (isolated package)</li><li>Low junction to case thermal resistance</li><li>RoHS Compliant</li></ul>
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View full reportTechnical parameters
| Power | |
|---|---|
| Current A (ampere) | 50 |
| Reverse Leakage Current | 15 |
| Environment and package | |
| MaxOperatingJunctionTemp | 175 |
| Other | |
| Configuration | Full Bridge |
| PKG | SOT-227 |
| Silicon Type | SiC Diode |
| Total Capacitive Charge | 133 |
| VF (V) | 1.5 |
| VRRM (V) | 700 |