Microchip TechnologyUnited States
SIC SBD 1200 V 100 A DUAL ISOTOP
All alternatives
View full report1 alternatives on file. Sign in to view them.
Technical parameters
| Power | |
|---|---|
| Current - Average Rectified (Io) (per Diode) | 100A (DC) |
| Current - Reverse Leakage @ Vr | 400 µA @ 1200 V |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 100 A |
| Environment and package | |
| Mounting Type | Chassis Mount |
| Operating Temperature - Junction | -55°C~175°C |
| Package | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Supplier Device Package | SOT-227 (ISOTOP®) |
| Other | |
| Base Product Number | MSC2X100 |
| Diode Configuration | 2 Independent |
| Diode Type | Silicon Carbide Schottky |
| Mfr | Microchip Technology |
| Product Status | Active |
| Reverse Recovery Time (trr) | 0 ns |
| Series | - |
| Speed | No Recovery Time > 500mA (Io) |
Documents
No documents are linked to this part yet.