Microchip TechnologyUnited States

<p>Our mSiC Diodes are engineered to deliver superior performance and efficiency. Silicon Carbide (SiC) Schottky Barrier Diodes (SBD) offer a lower forward voltage drop, higher switching speeds and reduced power losses. This enables improved efficiency, reduced thermal requirements and enhanced reliability.</p><p>This 1200V mSiC diode offers significant advantages in diverse applications with a forward current rating of up to 100A ensures robust performance in high-power applications. The reverse leakage current is minimized to 30 µA, providing excellent efficiency and reliability. This dual diode features an anti-parallel configuration, providing efficient reverse recovery performance and high-speed switching capabilities for your power electronics applications. mSiC diodes in a SOT-227 package are designed for high-power applications requiring exceptional thermal performance and reliability.</p><p>The SOT-227 package features a robust, isolated baseplate that ensures excellent heat dissipation. With the inherent advantages of SiC technology, the SOT-227 package supports higher current ratings and superior thermal cycling capabilities. Its modular design allows for easy parallel configurations and integration into high-power systems, providing a durable, efficient, and scalable solution for advanced energy applications.</p>