Microsemi CorporationUnited States

MS2272

ObsoleteTransistors - Bipolar (BJT) - RF

RF TRANS NPN 65V 1.215GHZ M216

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Technical parameters

Power
Current - Collector (Ic) (Max)24A
Power - Max940W
Voltage - Collector Emitter Breakdown (Max)65V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce10 @ 5A, 5V
Frequency - Transition960MHz ~ 1.215GHz
Gain7.6dB
Noise Figure (dB Typ @ f)-
Environment and package
Mounting TypeChassis Mount
Operating Temperature200°C(TJ)
PackageBulk
Package / CaseM216
Supplier Device PackageM216
Other
MfrMicrosemi Corporation
Product StatusObsolete
Series-
Transistor TypeNPN

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