Microchip TechnologyUnited States
DIODE GP 800V 3A SQ-MELF B
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View full reportTechnical parameters
Key specs
Reverse voltage800 V
Average rectified current3 A
Forward voltage1.3 VMax · 9 A
TypeStandardStandard Recovery >500ns，> 200mA (Io)
| Power | |
|---|---|
| Current - Average Rectified (Io) | 3A |
| Current - Reverse Leakage @ Vr | 1 µA @ 800 V |
| Voltage - DC Reverse (Vr) (Max) | 800 V |
| Voltage - Forward (Vf) (Max) @ If | 1.3 V @ 9 A |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction | -65°C~175°C |
| Package | Bulk |
| Package / Case | SQ-MELF, B |
| Supplier Device Package | SQ-MELF, B |
| Other | |
| Capacitance @ Vr, F | - |
| Diode Type | Standard |
| Mfr | Microchip Technology |
| Product Status | Active |
| Reverse Recovery Time (trr) | 2 µs |
| Series | Military, MIL-PRF-19500/420 |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
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