minos(迈诺斯)China
MPT016N10-T
Transistors - FETs, MOSFETs - Single漏源电压(Vdss):100V 连续漏极电流(Id):325A 导通电阻(RDS(on)):1.3mΩ@10V 阈值电压(Vgs(th)):3V@250uA
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage100 V
Continuous drain current325 A
On-resistance1.3 mΩMax · 10V
| Power | |
|---|---|
| 漏源电压(Vdss) | 100V |
| 连续漏极电流(Id) | 325A |
| Other | |
| 导通电阻(RDS(on)) | 1.3mΩ@10V |
| 数量 | 1个N沟道 |
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