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Technical parameters

Key specs

TypePNP
Collector-emitter voltage300 V
Collector current500 mAMax
DC current gain4010mA
Power625 mWMax
Power
Current - Collector Cutoff (Max)250nA (ICBO)
Current - Collector (Ic) (Max)500 mA
Power - Max625 mW
Voltage - Collector Emitter Breakdown (Max)300 V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 10mA, 10V
Frequency - Transition70MHz
Environment and package
Mounting TypeThrough Hole
Operating Temperature-55°C~150°C(TJ)
PackageStrip
Package / CaseTO-226-3, TO-92-3 (TO-226AA)
Supplier Device PackageTO-92
Other
MfrDiotec Semiconductor
Product StatusActive
Series-
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic500mV @ 2mA, 20mA

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