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Technical parameters

Key specs

TypeNPN
Collector-emitter voltage200 V
Collector current200 mAMax
DC current gain5030mA
Power625 mWMax
Power
Current - Collector Cutoff (Max)100nA (ICBO)
Current - Collector (Ic) (Max)200 mA
Power - Max625 mW
Voltage - Collector Emitter Breakdown (Max)200 V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 30mA, 10V
Frequency - Transition50MHz
Environment and package
Mounting TypeThrough Hole
Operating Temperature-55°C~150°C(TJ)
PackageTape & Box (TB)
Package / CaseTO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device PackageTO-92-3
Other
Base Product NumberMPSA43
Mfronsemi
Product StatusObsolete
Series-
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic400mV @ 2mA, 20mA

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