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Technical parameters

Key specs

TypeNPN
Collector-emitter voltage30 V
Collector current1.2 AMax
DC current gain10000100mA
Power625 mWMax
Power
Current - Collector Cutoff (Max)100nA (ICBO)
Current - Collector (Ic) (Max)1.2 A
Power - Max625 mW
Voltage - Collector Emitter Breakdown (Max)30 V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce10000 @ 100mA, 5V
Frequency - Transition125MHz
Environment and package
Mounting TypeThrough Hole
Operating Temperature-55°C~150°C(TJ)
PackageTape & Reel (TR)
Package / CaseTO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device PackageTO-92-3
Other
Base Product NumberMPSA13
Mfronsemi
Product StatusObsolete
Series-
Transistor TypeNPN - Darlington
Vce Saturation (Max) @ Ib, Ic1.5V @ 100µA, 100mA

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