ISOMICRON(安芯微半导体)China
The MOC3053 series combine an GaAs infrared emitting diode as the emitter which is optically coupled to a monolithic silicon random-phase photo triac in a plastic SOP4 package. With the robust coplanar double mold structure, MOC3053 series provide the most stable isolation feature.
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View full reportTechnical parameters
| Power | |
|---|---|
| Forward Current | I F | 6 0 | mA |
| Input Power Dissipation | P I | 100 | mW |
| Isolation Voltage | V iso | 3750 | Vrms | 1 |
| Off-state Output Terminal Voltage | V DRM | 600 | V |
| Output Power Dissipation | P O | 300 | mW |
| Peak Repetitive Surge Current PW=100μs, 120pps | I TSM | 1 | A |
| Reverse Voltage | V R | 6 | V |
| Total Power Dissipation | P tot | 330 | mW |
| Environment and package | |
| Junction Temperature | T j | 125 | °C |
| Operating Temperature | T opr | - 40 ~1 1 0 | °C |
| Soldering Temperature | T sol | 260 | °C | 2 |
| Storage Temperature | T stg | -55~125 | °C |