Yangjie TechnologyChina
Transistors - Bipolar (BJT) - Si
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View full reportTechnical parameters
Key specs
TypeNPN
Collector-emitter voltage30 V
Collector current300 mAMax
DC current gain20000150mA
Power225 mWMax
| Power | |
|---|---|
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| Current - Collector (Ic) (Max) | 300 mA |
| Power - Max | 225 mW |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
| AC and DC characteristics | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20000 @ 150mA, 1V |
| Frequency - Transition | 125MHz |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C~150°C(TJ) |
| Package | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | SOT-23 |
| Other | |
| Mfr | Yangjie Technology |
| Product Status | Active |
| Series | - |
| Transistor Type | NPN - Darlington |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 100µA, 100mA |
Documents
DatasheetDatasheet · 653.0 KB · 2026-09-22EnvironmentalEnvironmental · 5.9 MB · 2026-09-22EnvironmentalEnvironmental · 5.8 MB · 2026-09-22EnvironmentalEnvironmental · 1.5 MB · 2026-09-22EnvironmentalEnvironmental · 1.4 MB · 2026-09-22Package DrawingPackage Drawing · 265.5 KB · 2026-09-22
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