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HomeSingle Bipolar TransistorsCJ(江苏长电/长晶)MMBTA14
CJ(江苏长电/长晶)China

MMBTA14

Single Bipolar Transistors

MMBTA14

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Technical parameters

Key specs

TypeNPN
Collector-emitter voltage30 V
DC current gain20000
Power300 mWMax
Power
集射极击穿电压(Vceo)30V
AC and DC characteristics
直流电流增益(hFE)20000
Other
类型NPN
耗散功率(Pd)300mW

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DatasheetDatasheet · 817.0 KB · 2026-09-21DatasheetDatasheet · 705.3 KB · 2026-09-21DatasheetDatasheet · 676.4 KB · 2026-09-21DatasheetDatasheet · 566.6 KB · 2026-09-21DatasheetDatasheet · 532.6 KB · 2026-09-21DatasheetDatasheet · 514.8 KB · 2026-09-21DatasheetDatasheet · 505.0 KB · 2026-09-21DatasheetDatasheet · 491.7 KB · 2026-09-21DatasheetDatasheet · 462.8 KB · 2026-09-21DatasheetDatasheet · 460.7 KB · 2026-09-21DatasheetDatasheet · 451.0 KB · 2026-09-21DatasheetDatasheet · 440.4 KB · 2026-09-21DatasheetDatasheet · 439.1 KB · 2026-09-21DatasheetDatasheet · 431.5 KB · 2026-09-21DatasheetDatasheet · 431.4 KB · 2026-09-21DatasheetDatasheet · 406.5 KB · 2026-09-21
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