ANBON SEMICONDUCTOR (INT'L) LIMITEDTaiwan, China
HIGH VOLTAGE PNP TRANSISTOR
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View full reportTechnical parameters
Key specs
TypePNP
Collector-emitter voltage150 V
Collector current600 mAMax
DC current gain6010mA
Power350 mWMax
| Power | |
|---|---|
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| Current - Collector (Ic) (Max) | 600 mA |
| Power - Max | 350 mW |
| Voltage - Collector Emitter Breakdown (Max) | 150 V |
| AC and DC characteristics | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 10mA, 5V |
| Frequency - Transition | 300MHz |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR) Cut Tape (CT) Digi-Reel® |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | SOT-23 |
| Other | |
| Mfr | ANBON SEMICONDUCTOR (INT'L) LIMITED |
| Product Status | Active |
| Series | - |
| Transistor Type | PNP |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 5mA, 50mA |