MMBT3906T
Yangjie TechnologyChina

MMBT3906T

ActiveTransistors - Bipolar (BJT) - SingleSOT-523

SOT-523 PNP 0.15W -0.2A -40V Tra

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Technical parameters

Key specs

TypePNP
Collector-emitter voltage40 V
Collector current200 mAMax
DC current gain10010mA
Power150 mWMax
Power
Current - Collector Cutoff (Max)50nA (ICBO)
Current - Collector (Ic) (Max)200 mA
Power - Max150 mW
Voltage - Collector Emitter Breakdown (Max)40 V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 10mA, 1V
Frequency - Transition250MHz
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C~150°C
PackageTape & Reel (TR)
Package / CaseSOT-523
Supplier Device PackageSOT-523
Other
MfrYangjie Technology
Product StatusActive
Series-
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic400mV @ 5mA, 50mA

Documents

DatasheetDatasheet · 313.7 KB · 2026-09-22EnvironmentalEnvironmental · 5.9 MB · 2026-09-22EnvironmentalEnvironmental · 5.8 MB · 2026-09-22EnvironmentalEnvironmental · 1.5 MB · 2026-09-22EnvironmentalEnvironmental · 1.4 MB · 2026-09-22Package DrawingPackage Drawing · 249.3 KB · 2026-09-22
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