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Technical parameters

Key specs

TypePNP
Collector-emitter voltage40 V
Collector current200 mAMax
DC current gain10010mA
Power250 mWMax
Power
Current - Collector Cutoff (Max)50nA
Current - Collector (Ic) (Max)200 mA
Power - Max250 mW
Voltage - Collector Emitter Breakdown (Max)40 V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 10mA, 1V
Frequency - Transition250MHz
Environment and package
Mounting TypeSurface Mount
Operating Temperature150°C(TJ)
PackageBulk
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageSOT-23-3 (TO-236)
Other
Base Product NumberMMBT
MfrFairchild Semiconductor
Product StatusActive
Series-
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic400mV @ 5mA, 50mA

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