Cmos(广东场效应半导体)China
Darlington Transistor MJD112G
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View full reportTechnical parameters
| Power | |
|---|---|
| Channel | N达林顿 |
| Power | 20 |
| Environment and package | |
| Package | TO-251 |
| Other | |
| ID | 2 |
| Part Number | MJD112G |
| Product Name | MJD112G |
| Type | DIP/达林顿 |
| VDSS | 100 |
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