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View full reportTechnical parameters
| Power | |
|---|---|
| IC-最大集电极电流 | 2A |
| VCBO-CB结击穿电压 | 100V |
| VCBO-集基级击穿电压 | 100V |
| VCEO-CE结击穿电压 | 100V |
| VCEO-集射级击穿电压 | 100V |
| VEBO-EB结击穿电压 | 5V |
| VEBO-射基级击穿电压 | 5V |
| AC and DC characteristics | |
| fT-变换频率 | NMHZ |
| hFE-最小直流增益 | 1000 |
| Hfe-最小直流增益 | 1000 |
| Environment and package | |
| 封装类型1 | TO252 |
| 封装类型2 | TO252 |
| 最大工作温度 | 150℃ |
| Other | |
| Pd-功率耗散 | 1.5W |
| Pd-最大功率耗散 | 1W |
| VCE(sat)-CE结饱和压降 | 2V |
| VCE(sat)-集射级饱和压降 | 3V |
| 引脚数量1 | 3 |
| 引脚数量2 | 3 |
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