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HomeSingle Bipolar TransistorsBLUE ROCKET(蓝箭)MJD112
BLUE ROCKET(蓝箭)China

MJD112

Single Bipolar Transistors
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Technical parameters

Key specs

TypeNPN
Collector-emitter voltage100 V
DC current gain1000
Power1.75 WMax
Power
集射极击穿电压(Vceo)100V
AC and DC characteristics
直流电流增益(hFE)1000
Other
类型NPN
耗散功率(Pd)1.75W

Documents

DatasheetDatasheet · 816.0 KB · 2026-09-21DatasheetDatasheet · 765.8 KB · 2026-09-21DatasheetDatasheet · 729.3 KB · 2026-09-21DatasheetDatasheet · 617.0 KB · 2026-09-21DatasheetDatasheet · 584.2 KB · 2026-09-21DatasheetDatasheet · 547.2 KB · 2026-09-21DatasheetDatasheet · 519.6 KB · 2026-09-21DatasheetDatasheet · 515.6 KB · 2026-09-21DatasheetDatasheet · 477.8 KB · 2026-09-21DatasheetDatasheet · 462.5 KB · 2026-09-21DatasheetDatasheet · 434.7 KB · 2026-09-21Package DrawingPackage Drawing · 165.6 KB · 2026-09-22
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