The MG400Q2YMS3 is a Toshiba SiC MOSFET Modules product. SiC MOSFET Module, 1200V, 400A High power switching (Power conversion, Motor drive)| Find data sheet and product information from the product details page.
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View full reportTechnical parameters
| Power | |
|---|---|
| [Abs] Drain current (DC) (I D) | 400 A |
| [Abs] Drain-Source voltage (V DSS) | 1200 V |
| [Elec] Drain-source on-voltage(Sense terminal) (Typ.) (V DS(on)sense) | 0.9 V |
| [Elec] Source-drain off-voltage(Sense terminal) (Typ.) (V SD(off)sense) | 1.6 V |
| Environment and package | |
| [Abs] Channel temperature (T ch) | 150 ℃ |
| [Desc] RoHS Compatible Product(s) (#) | Available |
| Other | |
| [Desc] Application | High power switching (Power conversion, Motor drive) |
| [Desc] Circuit Configuration | 2in1 |
| [Desc] Feature | All SiC MOSFET type |
| [Elec] Reverse recovery loss (Typ.) (E rr) | 0.3 mJ |
| [Elec] Turn-off switching loss (Typ.) (E off) | 13 mJ |
| [Elec] Turn-on switching loss (Typ.) (E on) | 13 mJ |
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