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Technical parameters

Power
[Abs] Drain current (DC) (I D)400 A
[Abs] Drain-Source voltage (V DSS)1200 V
[Elec] Drain-source on-voltage(Sense terminal) (Typ.) (V DS(on)sense)0.9 V
[Elec] Source-drain off-voltage(Sense terminal) (Typ.) (V SD(off)sense)1.6 V
Environment and package
[Abs] Channel temperature (T ch)150 ℃
[Desc] RoHS Compatible Product(s) (#)Available
Other
[Desc] ApplicationHigh power switching (Power conversion, Motor drive)
[Desc] Circuit Configuration2in1
[Desc] FeatureAll SiC MOSFET type
[Elec] Reverse recovery loss (Typ.) (E rr)0.3 mJ
[Elec] Turn-off switching loss (Typ.) (E off)13 mJ
[Elec] Turn-on switching loss (Typ.) (E on)13 mJ

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