GeneSiC SemiconductorUnited States
DIODE SCHOTTKY 35V 200A 3 TOWER
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View full reportTechnical parameters
| Power | |
|---|---|
| Current - Average Rectified (Io) (per Diode) | 200A |
| Current - Reverse Leakage @ Vr | 3 mA @ 35 V |
| Voltage - DC Reverse (Vr) (Max) | 35 V |
| Voltage - Forward (Vf) (Max) @ If | 600 mV @ 200 A |
| Environment and package | |
| Mounting Type | Chassis Mount |
| Operating Temperature - Junction | -55°C~150°C |
| Package | Bulk |
| Package / Case | Three Tower |
| Supplier Device Package | Three Tower |
| Other | |
| Diode Configuration | 1 Pair Common Anode |
| Diode Type | Schottky |
| Mfr | GeneSiC Semiconductor |
| Product Status | Obsolete |
| Series | - |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
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