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Technical parameters

Datasheet-verified parameters

24 items
ParameterValue and test conditionsSource
Package14 TSSOP
Operating Temperature-40°C to +125°C
RoHSCompliant (Lead(Pb)-free)
Power-Supply Voltage Input RangeMin: 4.5V, Max: 15.5V
Total Quiescent CurrentTyp: 2.4mA, Max: 3.6mA (at TA=+25°C, RL=∞); Max: 4.0mA (at -40°C ≤ TA ≤ +125°C)
Input Offset VoltageTyp: 4μV, Max: 45μV (at TA=+25°C); Max: 50μV (at -40°C ≤ TA ≤ +125°C)
Input Offset Voltage DriftTyp: 0.1μV/°C, Max: 0.4μV/°C (at -40°C ≤ TA ≤ +125°C)
Input Bias CurrentTyp: 0.5nA, Max: 1.5nA (at TA=+25°C); Max: 2.5nA (at -40°C ≤ TA ≤ +125°C)
Input Offset CurrentTyp: 0.3nA, Max: 1.0nA (at TA=+25°C); Max: 2.0nA (at -40°C ≤ TA ≤ +125°C)
Open-Loop GainMin: 136dB, Typ: 145dB (at VDD=15V, TA=+25°C); Min: 129dB (at -40°C ≤ TA ≤ +125°C)
Input ResistanceTyp: 50MΩ
Maximum Output CurrentSinking: Typ 17mA; Sourcing: Typ 36mA
Output Voltage Swing HighMin: 13.8V, Typ: 14.8V (at VDD=15V, RL=5kΩ)
Output Voltage Swing LowMin: -11.3V, Typ: -12.7V (at VDD=15V, RL=5kΩ)
Input Voltage-Noise DensityTyp: 9nV/√Hz (at f=1kHz)
Input Voltage NoiseTyp: 200nVP-P (at 0.1Hz < f < 10Hz)
Gain-Bandwidth ProductTyp: 5MHz
Slew RateTyp: 3V/μs
Total Harmonic DistortionTyp: -100dB (at f=1kHz, VOUT=2VP-P, AV=+1V/V)
Capacitive LoadingTyp: 300pF (No sustained oscillation, AV=+1V/V)
Charge-Pump FrequencyTyp: 500kHz
CrosstalkTyp: -100dB (at f=1kHz)
Settling TimeTyp: 1μs
ProcessBiCMOS
All parameters (8)ExpandCollapse
Power
Power-Supply Voltage Input Range4.5 V (Min) to 15.5 V (Max)
Total Quiescent Current4.0 mA (Max)
AC and DC characteristics
Gain-Bandwidth Product5 MHz (Typ)
Input Offset Voltage50 μV (Max)
Input Offset Voltage Drift0.4 μV/°C (Max)
Slew Rate3 V/μs (Typ)
Environment and package
Operating Temperature Range-40°C to +125°C
Package14-Pin TSSOP

Pinout and package

Package14 TSSOP

PinNameFunctionSource
aDevice Supply Voltage Input. Bypass VDD with a 0.1μF capacitor to GND.

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