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Technical parameters

Datasheet-verified parameters

18 items
ParameterValue and test conditionsSource
Package8 SOIC
Operating Temperature Range-40°C to +85°C
Collector-Emitter Breakdown VoltageMin 15 V (IC < 100μA, Open base)
Collector-Emitter Breakdown Voltage (Shorted base)Min 15 V (IC < 100μA, Shorted base)
Collector-Emitter Sustaining VoltageMin 5.0 V (IC = 200mA)
Collector-Base Breakdown VoltageMin 15 V (IC < 100μA, emitter open)
DC Current GainMin 100 (IC = 250mA, VCE = 3V)
Collector Cutoff CurrentMin 0.05 μA, Typ 1.5 μA (VCE = 6V, VBE = 0V)
Output CapacitanceMin 9.6 pF (VCB = 3V, IE = 0mA, f = 1MHz)
Frequency RangeMin DC, Max 1 GHz
Base CurrentTyp 4.2 mA (VCC = 3.6V, VBB = 0.750V, POUT = 30dBm, f = 836MHz)
HarmonicsTyp -43 dBc (VCC = 3.6V, POUT = 30dBm)
Power GainTyp 11.6 dB (POUT = 30dBm)
Collector EfficiencyTyp 58 % (No modulation)
Noise FigureTyp 3.3 dB (VBB = 0.9V)
Storage Temperature Range-65°C to +165°C
Junction Temperature+150°C
Lead Temperature (soldering, 10s)+300°C
All parameters (17)ExpandCollapse
Power
Current - Collector (Ic) (Max)1.2A
Power - Max6.4W
Voltage - Collector Emitter Breakdown (Max)15V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 250mA, 3V
Frequency - Transition1GHz
Gain11.6dB
Noise Figure (dB Typ @ f)3.3dB @ 836MHz
Environment and package
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
PackageTube
Package / Case8-SOIC (0.154", 3.90mm Width) Exposed Pad
Supplier Device Package8-SOIC-EP
Other
Base Product NumberMAX2601
MfrAnalog Devices Inc./Maxim Integrated
Product StatusActive
Series-
Transistor TypeNPN

Pinout and package

TOP VIEW PSOPII
TOP VIEW PSOPII
Package: 8 SOIC
PinNameFunctionSource
1, 8C: Transistor Collector
2, 3, 6, 7, SlugE: Transistor Emitter
4, 5B: Transistor Base

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Datasheet-verified content is extracted by AI from the manufacturer datasheet. Click a page number to view the original.