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Technical parameters

Key specs

ProtocolRS-485
Drivers/Receivers1
Data rate40 MbpsMax
Supply voltage3 ~ 3.6 V

Datasheet-verified parameters

21 items
ParameterValue and test conditionsSource
ProtocolRS-485
Drivers / Receivers1 Driver, 1 Receiver
Data Rate40Mbps
Supply VoltageMin: 3.0V, Max: 3.6V
Package8 TDFN-EP
Operating Temperature-40°C to +125°C
GradeIndustrial
RoHSCompliant
Recommended Operating ConditionsVCC = +3.0V to +3.6V, TA = -40°C to +125°C
Absolute Maximum RatingsVCC: -0.3V to +6.0V
Supply CurrentTyp: 1.5mA, Max: 4mA (DE = RE = VCC or GND, DI = VCC or GND, no load)
Shutdown Supply CurrentMax: 10μA (DE = GND and RE = VCC)
Differential Driver OutputMin: 1.5V (RL = 54Ω)
Driver Short-Circuit Output CurrentMax: 250mA (0V ≤ VOUT ≤ +12V, output low)
Receiver Input HysteresisMin: 20mV, Typ: 170mV (VCM = 0V)
Receiver Differential Threshold VoltageVTHF: Min -200mV, Max -10mV; VTHR: Min 10mV, Max 200mV (-7V ≤ VCM ≤ 12V)
Thermal-Shutdown ThresholdMax: 160°C
ESD Protection (HBM)Typ: ±35kV (A, B to GND)
ESD Protection (IEC 61000-4-2 Air Gap)Typ: ±20kV (A, B to GND)
ESD Protection (IEC 61000-4-2 Contact)Typ: ±12kV (A, B to GND)
ProcessBiCMOS
All parameters (7)ExpandCollapse
Power
Supply Voltage3.0 V (Min) to 3.6 V (Max)
Environment and package
Operating Temperature Range-40°C to +125°C
Package8 TDFN-EP
Thermal-Shutdown Threshold160 °C (Max)
Other
ESD Protection: A, B to GND (HBM)±35 kV
Maximum Data Rate40 Mbps
Receiver Input Hysteresis (MAX14840E Only)170 mV (Typ)

Pinout and package

TOP VIEW TDFN
TOP VIEW TDFN
Package: 8 TDFN-EP
PinNameFunctionSource
1RO: Receiver Output
2RE: Active-Low Receiver-Output Enable
3DE: Driver-Output Enable
4DI: Driver Input
5GND: Ground
6A: Noninverting Receiver Input and Noninverting Driver Output
7B: Inverting Receiver Input and Inverting Driver Output
8VCC: Positive Supply Voltage Input
EPEP: Exposed Pad (TDFN Only), Connect to GND

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