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Technical parameters

Datasheet-verified parameters

25 items
ParameterValue and test conditionsSource
Package16 TQFN-EP (3mm x 3mm)
Operating Temperature Range-40°C to +125°C
RoHSCompliant (+ denotes lead(Pb)-free package/RoHS-compliant package)
IN VoltageMin: 4.5V, Max: 36V
Internal FETs On-ResistanceTyp: 190mΩ, Max: 370mΩ (I_LOAD=100mA, V_IN≥8V)
Current-Limit Adjustment RangeMin: 0.15A, Max: 1.0A
Internal Overvoltage Trip LevelTyp: 33V (V_IN rising), Min: 32V, Max: 34.3V
Internal Undervoltage Trip LevelTyp: 18.5V (V_IN falling), Min: 17.5V, Max: 19.5V
External OVLO Adjustment RangeMin: 6V, Max: 36V
External UVLO Adjustment RangeMin: 4.5V, Max: 24V
Shutdown IN CurrentTyp: 6.6μA, Max: 16μA (V_EN=0V, V_HVEN=5V)
Shutdown OUT CurrentTyp: 0.1μA, Max: 2μA (V_EN=0V, V_HVEN=5V, V_OUT=0V)
Supply CurrentTyp: 530μA, Max: 800μA (V_IN=15V, V_HVEN=0V)
Reverse IN CurrentTyp: -21μA, Min: -35μA (V_IN=-40V, V_OUT=V_GND=0V)
Thermal ShutdownTyp: 150°C
Thermal Shutdown HysteresisTyp: 30°C
Blanking TimeMin: 17.8ms, Typ: 21ms, Max: 24.1ms
Autoretry TimeMin: 527ms, Typ: 620ms, Max: 713ms
Switch Turn-On TimeTyp: 500μs (R_LOAD=240Ω, C_OUT=470μF)
Switch Turn-Off TimeTyp: 3μs (R_LOAD=47Ω, C_OUT=1μF)
Maximum Junction Temperature+150°C
Storage Temperature Range-65°C to +150°C
Continuous Power Dissipation1667mW (T_A = +70°C, derate 20.8mW/°C above +70°C)
Absolute Maximum Rating - IN to GND-40V to +40V
Absolute Maximum Rating - OUT-0.3V to +40V
All parameters (13)ExpandCollapse
Power
Voltage - Clamping-
Voltage - Working36V
Environment and package
Mounting TypeSurface Mount
PackageTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / Case16-WFQFN Exposed Pad
Supplier Device Package16-TQFN (3x3)
Other
ApplicationsGeneral Purpose
Base Product NumberMAX14588
MfrAnalog Devices Inc./Maxim Integrated
Number of Circuits1
Product StatusActive
Series-
TechnologyInternal Switch

Pinout and package

\*CONNECT EP TO GND
\*CONNECT EP TO GND
Package: 16 TQFN-EP (3mm x 3mm)
PinNameFunctionSource
1CLTS_MODE: Current-Limit-Type Select Mode. 0: CLTS1 and CLTS2 sampled only when (V_IN - V_OUT) < 0.6V; 1: Continuously sampled.
2CLHS: Current-Limit-Type-Select Logic-High Voltage. Connect CLTS_MODE/CLTS1/CLTS2 to CLHS for logic-high.
3CLTS1: Current-Limit-Type Select 1.
4CLTS2: Current-Limit-Type Select 2.
5HVEN: 36V Capable Active-Low Enable Input.
8OVLO: Externally Programmable Overvoltage Lockout Threshold. Connect OVLO to GND to use the default internal OVLO threshold. Connect OVLO to an external resistor-divider to define a threshold externally.
9UVLO: Externally Programmable Undervoltage Lockout Threshold. Connect UVLO to GND to use the default internal UVLO threshold. Connect UVLO to an external resistor-divider to define a threshold externally.
10SETI: Overload-Current-Limit Adjust. Connect a resistor from SETI to GND to program the overcurrent limit. SETI must be connected to a resistor.
11GND: Ground.
12FLAG: Open-Drain Fault Indicator Output. FLAG goes low when the fault duration exceeds the blanking time, reverse current is detected, thermal shutdown mode is active, OVLO threshold is reached, or SETI is connected to GND.
13EN: Active-High Enable Input.
16RIEN: Reverse-Current Enable Input. Connect RIEN to GND to disable the reverse-current flow protection. Connect RIEN to logic-high to activate the reverse-current flow protection.
14, 15OUT: Output Voltage. Output of internal FETs. Bypass OUT to GND with a 1μF ceramic capacitor placed as close to the device as possible.
6, 7IN: Overvoltage Protection Input. Bypass IN to ground with a 0.47μF ceramic capacitor.
EPEP: Exposed Pad. Connect EP to ground. Do not use EP as the only ground connection.

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