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HomeTransistors - FETs, MOSFETs - SingleLRC(乐山无线电)LP4435T1G
LRC(乐山无线电)China

LP4435T1G

Transistors - FETs, MOSFETs - Single
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Technical parameters

Key specs

ChannelP-channel
Drain-source voltage30 V
Continuous drain current9.5 A
On-resistance37 mΩMax · 4.5V
Power
漏源电压(Vdss)30V
连续漏极电流(Id)9.5A
Other
导通电阻(RDS(on))37mΩ@4.5V
数量1个P沟道

Documents

DatasheetDatasheet · 9.2 MB · 2026-09-21DatasheetDatasheet · 2.3 MB · 2026-09-21DatasheetDatasheet · 1.4 MB · 2026-09-21DatasheetDatasheet · 1.3 MB · 2026-09-21DatasheetDatasheet · 1.2 MB · 2026-09-21DatasheetDatasheet · 585.9 KB · 2026-09-21DatasheetDatasheet · 493.5 KB · 2026-09-21DatasheetDatasheet · 394.2 KB · 2026-09-21DatasheetDatasheet · 387.8 KB · 2026-09-21DatasheetDatasheet · 335.3 KB · 2026-09-21DatasheetDatasheet · 316.2 KB · 2026-09-21DatasheetDatasheet · 315.1 KB · 2026-09-21DatasheetDatasheet · 314.7 KB · 2026-09-21DatasheetDatasheet · 52.5 KB · 2026-09-21
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