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Technical parameters

Datasheet-verified parameters

22 items
ParameterValue and test conditionsSource
PackageSOIC (D), 8-Pin
Operating Temperature Range-40°C ≤ TJ ≤ +85°C
RoHSYes
Supply Voltage Range4.75V to 15.5V
Absolute Maximum Ratings: Supply Voltage (V+ - V-)16V
Absolute Maximum Ratings: Junction Temperature150°C
Absolute Maximum Ratings: Storage Temperature Range-65°C to +150°C
Input Bias Current40 fA (Ultra Low)
Voltage Gain120 dB (High Voltage Gain)
Offset Voltage Drift2.5 μV/°C (Low)
Slew Rate0.11 V/μs
Power Consumption0.5 mW (Micropower Operation)
Common Mode Rejection Ratio (CMRR)Typ 83 dB, Min 63 dB (V+ = 15V, 0V ≤ VCM ≤ 12V)
Positive Power Supply Rejection Ratio (+PSRR)Typ 83 dB, Min 63 dB (5V ≤ V+ ≤ 15V)
Negative Power Supply Rejection Ratio (-PSRR)Typ 94 dB, Min 74 dB (0V ≤ V- ≤ -10V)
Input Common-Mode Voltage RangeMin -0.4 V, Max V+ - 1.9 V (V+ = 5V & 15V, For CMRR ≥ 50 dB)
Large Signal Voltage GainTyp 1000 V/mV, Min 200 V/mV (RL = 100 kΩ, Sinking)
Output Voltage SwingMin 4.40 V, Max 0.06 V (V+ = 5V, RL = 100 kΩ to 2.5V)
Output CurrentTyp 22 mA, Min 13 mA (V+ = 5V, Sourcing, VO = 0V)
Supply CurrentTyp 86 μA, Max 165 μA (Both Amplifiers, VO = 1.5V)
Thermal Resistance (θJA)165°C/W (8-Pin SOIC)
ESD Tolerance1000V (Human body model)
All parameters (27)ExpandCollapse
Power
单通道静态电流43uA
最大供电电压15.5V
最大偏置电流200pA
最小供电电压4.75V
输出电流40mA
AC and DC characteristics
低频电压噪声NuVPP
共模抑制比83dB
增益带宽0.35MHz
失调电压温漂2.5uV/℃
最大失调电压9000uV
最大失调电流100pA
电压噪声密度42nV/√Hz
电源抑制比83dB
输出压摆率0.11V/us
Environment and package
封装类型1SOIC
最大工作温度85℃
最小工作温度-40℃
Other
EMI滤波0
使能关断0
共模输入(与VCC+差值)-1.9V
共模输入(与VCC-差值)-0.4V
引脚数量18
轨到轨输入1
轨到轨输出1
输出摆幅(与VCC+差值)-0.013V
输出摆幅(与VCC-差值)0.004V
零漂移特性0

Pinout and package

Connection Diagram Figure 1. 8…
Connection Diagram Figure 1. 8…
Package: SOIC (D), 8-Pin
PinNameFunctionSource
1Output A
2Inverting Input A
3Non-Inverting Input A
4Negative Supply (V-)
5Non-Inverting Input B
6Inverting Input B
7Output B
8Positive Supply (V+)

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