Texas InstrumentsUnited States
The LF356-MIL device are the first monolithic JFET input operational amplifiers to incorporate well-matched, high-voltage JFETs on the same chip with standard bipolar transistors (BI-FET™ Technology). These amplifiers feature low input bias and offset currents/low offset voltage and offset voltage drift, coupled with offset adjust, which does not degrade drift or common-mode rejection. The devices are also designed for high slew rate, wide bandwidth, extremely fast settling time, low voltage and current noise and a low 1/f noise corner.
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View full reportTechnical parameters
| Power | |
|---|---|
| Iq per channel (typ) (mA) | 5 |
| Number of channels | 1 |
| Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) | 36 |
| Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) | 10 |
| AC and DC characteristics | |
| CMRR (typ) (dB) | 100 |
| Offset drift (typ) (µV/°C) | 3 |
| Slew rate (typ) (V/µs) | 12 |
| Vos (offset voltage at 25°C) (max) (mV) | 2 |
| Environment and package | |
| Operating temperature range (°C) | -40 to 85 |
| Other | |
| Architecture | FET |
| GBW (typ) (MHz) | 5 |
| Iout (typ) (A) | 0.025 |
| Rail-to-rail | In to V+ |
| Rating | Military |
| Vn at 1 kHz (typ) (nV√Hz) | 12 |