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Technical parameters

Power
Input bias current (max) (pA)100
Input common mode headroom (to negative supply) (typ) (V)3
Input common mode headroom (to positive supply) (typ) (V)0.1
Iq per channel (typ) (mA)5
Number of channels1
Output swing headroom (to negative supply) (typ) (V)2
Output swing headroom (to positive supply) (typ) (V)-2
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V)44
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V)10
AC and DC characteristics
CMRR (typ) (dB)100
Offset drift (typ) (µV/°C)5
Slew rate (typ) (V/µs)12
Vos (offset voltage at 25°C) (max) (mV)5
Environment and package
Operating temperature range (°C)-25 to 85
Other
ArchitectureFET
GBW (typ) (MHz)5
Iout (typ) (A)0.025
Rail-to-railNo
RatingMilitary
Vn at 1 kHz (typ) (nV√Hz)12

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