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Technical parameters

Key specs

TypePNP
Collector-emitter voltage25 V
Collector current300 mAMax
DC current gain12050mA
Power400 mWMax
Power
Current - Collector Cutoff (Max)100nA (ICBO)
Current - Collector (Ic) (Max)300 mA
Power - Max400 mW
Voltage - Collector Emitter Breakdown (Max)25 V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 50mA, 1V
Frequency - Transition-
Environment and package
Mounting TypeThrough Hole
Operating Temperature150°C(TJ)
PackageBulk
Package / CaseTO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device PackageTO-92-3
Other
MfrFairchild Semiconductor
Product StatusObsolete
Series-
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic600mV @ 30mA, 300mA

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