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Technical parameters

Key specs

Reverse voltage1 kV
Average rectified current35 A35 A (Tc = 55°C)
Forward voltage1.1 VMax · 1.1 V (at IF = 17.5 A)

Datasheet-verified parameters

20 items
ParameterValue and test conditionsSource
Maximum Average Forward Current35 A (Tc = 55°C)
Maximum Recurrent Peak Reverse Voltage1000 V
Maximum Forward Voltage per Diode1.1 V (at IF = 17.5 A)
TypeSilicon Bridge Rectifiers
PackageMetal Case (BR50M)
Operating Junction Temperature Range-40 to +150 °C
RoHSPb / RoHS Free
Maximum RMS Voltage700 V
Maximum DC Blocking Voltage1000 V
Peak Forward Surge Current400 A (Single half sine wave Superimposed on rated load, JEDEC Method)
Current Squared Time660 A²S (at t < 8.3 ms)
Maximum DC Reverse Current10 μA (Ta = 25 °C, at Rated DC Blocking Voltage)
Maximum DC Reverse Current (High Temp)200 μA (Ta = 100 °C, at Rated DC Blocking Voltage)
Typical Thermal Resistance (Junction to Case)1.5 °C/W
Typical Thermal Resistance (Junction to Ambient)10 °C
Storage Temperature Range-40 to +150 °C
Case MaterialMetal Case
Epoxy Flame Retardant RateUL94V-0
TerminalsPlated .25 inch (6.35 mm) Faston
Weight17.1 grams
All parameters (6)ExpandCollapse
Power
Maximum Average Forward Current Tc = 55°C35 A
Maximum DC Reverse Current Ta = 25 °C at Rated DC Blocking Voltage10 μA
Maximum Forward Voltage per Diode at IF = 17.5 A1.1 V
Maximum Recurrent Peak Reverse Voltage1000 V
Environment and package
CaseMetal Case
Operating Junction Temperature Range-40 to +150 °C

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