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View full reportTechnical parameters
Key specs
TypePNP
Collector-emitter voltage175 V
Collector current1 AMax
DC current gain5050mA
Power1.5 WMax
| Power | |
|---|---|
| Current - Collector Cutoff (Max) | 10µA |
| Current - Collector (Ic) (Max) | 1 A |
| Power - Max | 1.5 W |
| Voltage - Collector Emitter Breakdown (Max) | 175 V |
| AC and DC characteristics | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 50mA, 10V |
| Frequency - Transition | - |
| Environment and package | |
| Grade | Military |
| Mounting Type | Surface Mount |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Package / Case | 3-SMD, No Lead |
| Qualification | MIL-PRF-19500/357 |
| Supplier Device Package | UB |
| Other | |
| Base Product Number | 2N3636 |
| Mfr | Microchip Technology |
| Packaging | Bulk |
| Part Status | Active |
| Series | - |
| Transistor Type | PNP |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 50mA |