Analog Devices Inc.United States

J309 TO-92 3L ROHS

JFETs
Ask AI FAEDatasheet PDF

All alternatives

View full report

Technical parameters

Power
栅源击穿电压(V(BR)GSS)25V
栅源截止电压(VGS(off))1V@1nA
Other
FET类型1个N沟道
耗散功率(Pd)350mW

Documents

DatasheetDatasheet · 410.7 KB · 2026-09-21DatasheetDatasheet · 207.1 KB · 2026-09-21DatasheetDatasheet · 152.3 KB · 2026-09-21
Open document center