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Technical parameters

Key specs

Memory typeDRAM
Memory size1.152 Gbit
InterfaceParallel
Supply voltage1.28 ~ 1.42 V
Clock frequency1.066 GHzMax
Power
Voltage - Supply1.28V ~ 1.42V
AC and DC characteristics
Clock Frequency1.066 GHz
Environment and package
Memory Size1.152Gbit
Mounting TypeSurface Mount
Operating Temperature-40°C ~ 95°C (TC)
PackageBulk
Package / Case168-LBGA
Supplier Device Package168-FBGA (13.5x13.5)
Other
Access Time7.5 ns
Memory FormatDRAM
Memory InterfaceParallel
Memory Organization64M x 18
Memory TypeVolatile
MfrISSI, Integrated Silicon Solution Inc
Product StatusActive
Series-
TechnologyRLDRAM 3
Write Cycle Time - Word, Page-

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