VBsemi(微碧半导体)China
IRLR7843TRPBF&-2-VB
Transistors - FETs, MOSFETs - SingleTO252；N—Channel沟道,30V；120A；RDS(ON)=2.3mΩ@VGS=10V,VGS=20V；Vth=1.5~2.5V；
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage30 V
Continuous drain current120 A
On-resistance2.3 mΩMax · 10V
| Power | |
|---|---|
| 漏源电压(Vdss) | 30V |
| 连续漏极电流(Id) | 120A |
| Other | |
| 导通电阻(RDS(on)) | 2.3mΩ@10V,38.8A |
| 数量 | 1个N沟道 |