Infineon TechnologiesGermany
MOSFET P-CH 30V 3.6A SOT23
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View full reportTechnical parameters
Key specs
ChannelP-channel
Drain-source voltage30 V
Continuous drain current3.6 A
On-resistance64 mΩMax · 3.6A
Gate threshold voltage2.4 VMax · 10μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 3.6A (Ta) |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Power Dissipation (Max) | 1.3W (Ta) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C~150°C(TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT); Digi-Reel® |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | Micro3™/SOT-23 |
| Other | |
| Base Product Number | IRLML9301 |
| FET Feature | - |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 4.8 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 388 pF @ 25 V |
| Mfr | Infineon Technologies |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 64mOhm @ 3.6A, 10V |
| Series | HEXFET® |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2.4V @ 10µA |