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Technical parameters

Key specs

ChannelP-channel
Drain-source voltage-30 VMin: -30 V (ID=-250μA,VGS=0V)
Continuous drain current-3.6 AMax: -3.6 A (VGS=-10V,TA=25°C),Max: -2.9 A (VGS=-10V,TA=70°C)
On-resistance64 mΩMax · Max: 64 mΩ (VGS=-10V,ID=-3.6A),Max: 80 mΩ (VGS=-4.5V,ID=-2.9A)
Gate threshold voltage-2.4 VMax · Max: -2.4 V (VDS=VGS,ID=-10μA)

Datasheet-verified parameters

20 items
ParameterValue and test conditionsSource
ChannelP-Channel
Drain-Source Breakdown VoltageMin: -30 V (ID=-250μA, VGS=0V)
Continuous Drain CurrentMax: -3.6 A (VGS=-10V, TA=25°C); Max: -2.9 A (VGS=-10V, TA=70°C)
Static Drain-to-Source On-ResistanceTyp: 51 mΩ, Max: 64 mΩ (VGS=-10V, ID=-3.6A); Typ: 60 mΩ, Max: 80 mΩ (VGS=-4.5V, ID=-2.9A)
Gate Threshold VoltageMin: -1.3 V, Max: -2.4 V (VDS=VGS, ID=-10μA)
PackageSOT-23
Junction and Storage Temperature Range-55 to 150 °C
RoHSEnvironmentally friendly
Pulsed Drain CurrentMax: -15 A
Maximum Power DissipationMax: 1.3 W (TA=25°C); Max: 0.8 W (TA=70°C)
Gate-to-Source VoltageMax: ±20 V
Drain-to-Source Leakage CurrentMax: 1 μA (VDS=-24V, VGS=0V); Max: 150 μA (VDS=-24V, VGS=0V, TJ=125°C)
Gate-to-Source Forward LeakageMax: -100 nA (VGS=-20V)
Internal Gate ResistanceTyp: 12 Ω
Forward TransconductanceMin: 5 S (VDS=-10V, ID=-3.6A)
Total Gate ChargeTyp: 4.8 nC (VDS=-15V, VGS=-4.5V, ID=-3.6A)
Input CapacitanceTyp: 388 pF (VGS=0V, VDS=-25V, f=1KHz)
Output CapacitanceTyp: 93 pF (VGS=0V, VDS=-25V, f=1KHz)
Continuous Source Current (Body Diode)Max: -1.3 A
Diode Forward VoltageMax: -1.2 V (TJ=25°C, IS=-1.3A, VGS=0V)
All parameters (7)ExpandCollapse
Power
Continuous Drain Current, $V_{GS}$ @ 10V-3.6 A
Drain-Source Voltage-30 V
Gate Threshold Voltage-1.3 V (Min)
Maximum Power Dissipation1.3 W
Environment and package
Junction and Storage Temperature Range-55 to 150 °C
PackageSOT-23
Other
Static Drain-to-Source On-Resistance64 mΩ (Max)

Pinout and package

SOT-23
SOT-23
Package: SOT-23
PinNameFunctionSource
1GATE
2SOURCE
3DRAIN

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